Thin-film infrared sensor

薄膜赤外線センサ

Abstract

(57)【要約】 【課題】 感度が良好で、しかも、膜が剥離したりせ ず、基板の加工の容易な薄膜赤外線センサを提供するこ と。 【解決手段】 基板1の表面に強誘電体薄膜4を形成し てなる薄膜赤外線センサSにおいて、前記基板1として シリコン基板を用い、このシリコン基板1と前記強誘電 体薄膜4との間に酸化アルミニウム薄膜2を形成してい る。
PROBLEM TO BE SOLVED: To obtain a thin-film infrared sensor whose sensitivity is good and whose silicon substrate can be worked easily by a method wherein an aluminum oxide thin film is formed between the silicon substrate and a ferroelectric thin film. SOLUTION: In order to reduce the heat capacity of a substrate 1, its rear surface side is etched. A substratum electrode 3 is composed of platimum. In addition, an upper-part electrode 5 is composed of chromium, and an infrared absorbing film 6 is composed of gold black. At this time, an aluminum oxide film 2 whose difference in a coefficient of thermal expansion from that of the substrate 1 is small and whose lattice constant is close to that of the substrate is formed on the substrate 1, and the thin film 2 acts as a buffer layer. Then, the electrode 3 on the thin film 2 and a ferroelectric thin film 4 can be epitaxially grown, the electrode 3 and the thin film 4 whose crystallinity is excellent can be formed, and the thin film 4 is not stripped from the substrate 1. Then, since the substrate 1 and the thin film 2 can be worked easily, a thin- film infrared sensor whose sensitivity is good can be mass-produced easily.

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Cited By (7)

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    JP-2002261249-ASeptember 13, 2002Asahi Kasei Corp, Makoto Ishida, 旭化成株式会社, 誠 石田半導体記憶素子
    JP-2004281742-AOctober 07, 2004Japan Science & Technology Agency, 独立行政法人 科学技術振興機構Semiconductor device, semiconductor sensor and semiconductor memory element
    JP-2009198700-ASeptember 03, 2009Nidek Co Ltd, Toyohashi Univ Of Technology, 国立大学法人豊橋技術科学大学, 株式会社ニデック形状可変ミラーの製造方法及び形状可変ミラー
    KR-100738852-B1July 12, 2007도쿠리쓰교세이호징 가가쿠 기주쓰 신코 기코반도체 메모리 소자 및 초음파 센서
    US-7692257-B2April 06, 2010National University Corporation Toyohashi University Of TechnologyUltrasonic sensor comprising a metal/ferroelectric/metal/insulator/semiconductor structure
    WO-2004084322-A1September 30, 2004Japan Science And Technology AgencyElement a semi-conducteurs, capteur a semi-conducteurs et element de memoire a semi-conducteurs
    WO-2006132161-A1December 14, 2006National University Corporation Toyohashi University Of TechnologyIntegrated device